A Ukrainian University offers an original (unparalleled) direct ion deposition method for producing nanocrystalline silicon carbide (nc-SiC) films which possess both bulk silicon carbide properties (resistance to harsh mechanical, radiation, chemical, thermal effects) and properties associated with dimensional quantum effects (anomalously large values of second and third order optical nonlinearity, polariton effects, etc.).
Also, using the same technology, it is possible to obtain films of boron nitride of cubic modification (diamond analog), for the production of which there are no technolog